stp33n10.pdf part of ST stp33n10 stp33n10.pdf, . Electronic Components Datasheets Active components Transistors ST stp33n10.pdf text manual preview

Text preview for : stp33n10.pdf part of ST stp33n10 . Electronic Components Datasheets Active components Transistors ST stp33n10.pdf

Back to : stp33n10.pdf | Home

STP33N10
STP33N10FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE VDSS R DS(on) ID
STP33N10 100 V < 0.06 33 A
STP33N10FI 100 V < 0.06 18 A

s TYPICAL RDS(on) = 0.045
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
3 3
s LOW GATE CHARGE 2 2
1 1
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED TO-220 ISOWATT220
CHARACTERIZATION

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS INTERNAL SCHEMATIC DIAGRAM
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STP33N10 STP33N10FI
V DS Drain-source Voltage (V GS = 0) 100 V
V DGR Drain- gate Voltage (R GS = 20 k) 100 V
V GS Gate-source Voltage