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BF1207
Dual N-channel dual gate MOSFET
Rev. 01 -- 28 July 2005 Product data sheet

1. Product profile

1.1 General description
The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch.

The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

MSC895

1.2 Features
s Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with partly integrated bias
s Internal switch to save external components
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio

1.3 Applications
s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
television tuners and professional communication equipment
Philips Semiconductors BF1207
Dual N-channel dual gate MOSFET

1.4 Quick reference data
Table 1: Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage DC - - 6 V
ID drain current DC - - 30 mA
Ptot total power dissipation Tsp 107