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Si2301DS
Vishay Siliconix
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.130 @ VGS = - 4.5 V - 2.3
- 20
0.190 @ VGS = - 2.5 V - 1.9
TO-236
(SOT-23)
G 1
3 D Ordering Information: Si2301DS-T1
S 2
Top View
Si2301DS (A1)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 20
V
Gate-Source Voltage VGS "8
TA= 25_C - 2.3
Continuous Drain Current (TJ = 150_C)b ID
TA= 70_C - 1.5
A
Pulsed Drain Currenta IDM - 10
Continuous Source Current (Diode Conduction)b IS - 1.6
TA= 25_C 1.25
Power Dissipationb PD W
TA= 70_C 0.8
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambientb 100
RthJA _C/W
Maximum Junction-to-Ambientc 166
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70627 www.vishay.com
S-31990--Rev. E, 13-Oct-03 1
Si2301DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 mA - 20
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 0.45
Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA
VDS = - 20 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 20 V, VGS = 0 V, TJ = 55_C - 10
VDS v - 5 V, VGS = - 4.5 V -6
On State Drain Currenta
On-State ID( )
D(on) A
VDS v - 5 V, VGS = - 2.5 V -3
VGS = - 4.5 V, ID = - 2.8 A 0.105 0.130
Drain Source On Resistancea
Drain-Source On-Resistance rDS( )
DS(on) W
VGS = - 2.5 V, ID = - 2.0 A 0.145 0.190
Forward Transconductancea gfs VDS = - 5 V, ID = - 2.8 A 6.5 S
Diode Forward Voltage VSD IS = - 1.6 A, VGS = 0 V - 0.80 - 1.2 V
Dynamicb
Total Gate Charge Qg 5.8 10
Gate-Source Charge Qgs VDS = - 6 V, VGS = - 4.5 V 0.85 nC
ID ^ - 2.8 A
Gate-Drain Charge Qgd 1.70
Input Capacitance Ciss 415
Output Capacitance Coss VDS = - 6 V, VGS = 0, f = 1 MHz 223 pF
Reverse Transfer Capacitance Crss 87
Switchingc
td(on) 13.0 25
Turn-On
Turn On Time
tr VDD = - 6 V, RL = 6 W 36.0 60
ID ^ - 1 0 A VGEN = - 4.5 V
1.0 A, 45 ns
td(off) RG = 6 W 42 70
Turn-Off Time
tf 34 60
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
www.vishay.com Document Number: 70627
2 S-31990--Rev. E, 13-Oct-03
Si2301DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
10 10
VGS = 5, 4.5, 4, 3.5, 3 V
2.5 V TC = - 55_C
8 8
I D - Drain Current (A)
I D - Drain Current (A)
25_C
6 6
125_C
2V
4 4
2 0, 0.5, 1 V 2
1.5 V
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.6 1000
0.5
800
r DS(on)- On-Resistance ( W )
C - Capacitance (pF)
0.4
600
0.3 Ciss
VGS = 2.5 V
400
0.2 Coss
VGS = 4.5 V Crss
200
0.1
0.0 0
0 2 4 6 8 10 0 3 6 9 12
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 1.8
VDS = 6 V VGS = 4.5 V
ID = 2.8 A ID = 2.8 A
1.6
4
V GS - Gate-to-Source Voltage (V)
r DS(on)- On-Resistance ( W )
1.4
3
(Normalized)
1.2
2
1.0
1
0.8
0 0.6
0 2 4 6 8 - 50 0 50 100 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 70627 www.vishay.com
S-31990--Rev. E, 13-Oct-03 3
Si2301DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.6
0.5
r DS(on)- On-Resistance ( W )
I S - Source Current (A)
0.4
TJ = 150_C
0.3 ID = 2.8 A
TJ = 25_C
0.2
0.1
1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 14
0.3 12
10
0.2
VGS(th) Variance (V)
ID = 250 mA
Power (W)
8
0.1 TC = 25_C
Single Pulse
6
0.0
4
- 0.1
2
- 0.2 0
- 50 0 50 100 150 0.01 0.10 1.00 10.00
TJ - Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70627
4 S-31990--Rev. E, 13-Oct-03
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Revision: 18-Jul-08 1