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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW50F
HF/VHF power transistor
Product specification August 1986
Philips Semiconductors Product specification
HF/VHF power transistor BLW50F
DESCRIPTION It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
N-P-N silicon planar epitaxial
from the flange.
transistor primarily intended for use in
class-A, AB and B operated, industrial
and military transmitters in the h.f.
and v.h.f. band. Resistance
stabilization provides protection
against device damage at severe load
mismatch conditions. Matched
hFE groups are available on request.
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION VCE f PL Gp dt IC IC(ZS) d3 Th
V MHz W dB % A mA dB