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CEPF640/CEBF640
CEFF640
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
Type VDSS RDS(ON) ID @VGS
CEPF640 200V 0.15 19A 10V
CEBF640 200V 0.15 19A 10V
CEFF640 200V 0.15 19A d 10V

Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-220F full-pak for through hole.

D G

G G
G D D
S S S S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS