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KTA1664

TRANSISTOR (PNP) SOT-89-3L

FEATURES
Complementary to KTC4376 1. BASE

Small Flat Package
2. COLLECTOR
High Current Application
3. EMITTER

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -35 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -800 mA
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -35 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA
Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA
VCE=-1V, IC=-100mA 100 320
DC current gain hFE
VCE=-1V, IC=-700mA 35
Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-20mA -0.7 V
Base-emitter voltage VBE VCE=-1V, IC=-10mA -0.5 -0.8 V
Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 19 pF
Transition frequency fT VCE=-5V,IC= -10mA 120 MHz

CLASSIFICATION OF hFE
RANK O Y
RANGE 100