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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ101AU

GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope
intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 1.5 A
ICM Collector current peak value - 3 A
Ptot Total power dissipation Tmb 25