Text preview for : std8ns25.pdf part of ST std8ns25 . Electronic Components Datasheets Active components Transistors ST std8ns25.pdf
Back to : std8ns25.pdf | Home
STD8NS25
N-CHANNEL 250V - 0.38 - 8A DPAK
MESH OVERLAYTM MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STD8NS25 250 V < 0.45 8A
s TYPICAL RDS(on) = 0.38
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
3
1
DESCRIPTION DPAK
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company's proprietary edge termina-
tion structure, makes it suitable in coverters for INTERNAL SCHEMATIC DIAGRAM
lighting applications.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 250 V
VDGR Drain-gate Voltage (RGS = 20 k) 250 V
VGS Gate- source Voltage