am2931.pdf part of ST am2931 am2931.pdf, . Electronic Components Datasheets Active components Transistors ST am2931.pdf text manual preview

Text preview for : am2931.pdf part of ST am2931 . Electronic Components Datasheets Active components Transistors ST am2931.pdf

Back to : am2931.pdf | Home

AM2931-110
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS

.
. REFRACTORY/GOLD METALLIZATION

.
.
EMITTER SITE BALLASTED
3:1 VSWR CAPABILITY

.
.
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING

.
.
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 105 W MIN. WITH 6.2 dB GAIN
.400 x .500 2L SFL (S138)
hermetically sealed

ORDER CODE BRANDING
AM2931-110 2931-110

DESCRIPTION PIN CONNECTION
The AM2931-110 is a high power silicon bipolar
NPN transistor specifically designed for S-Band
radar pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR. Low
RF thermal resistance, refractory/gold metalliza-
tion, and computerized automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM2931-110 is supplied in the BIGPACTM Her-
metic M etal/Ceramic package with i nternal 1. Collector 3. Emitter
Input/Output matching circuitry, and is intended 2. Base 4. Base
for military and other high reliability applications.

ABSOLUTE MAXIMUM RATINGS (T case = 25