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DATA SHEET
dbook, halfpage
M3D123
BFG25AW; BFG25AW/X
NPN 5 GHz wideband transistors
Product specification 1998 Sep 23
Supersedes data of August 1995
NXP Semiconductors Product specification
BFG25AW;
NPN 5 GHz wideband transistors
BFG25AW/X
FEATURES PINNING
Low current consumption PIN DESCRIPTION lfpage 4 3
(100 A to 1 mA)
BFG25AW
Low noise figure
1 collector
Gold metallization ensures
excellent reliability. 2 base
1 2
3 emitter
APPLICATIONS 4 emitter Top view MBK523
Wideband applications in UHF low BFG25AW/X
Fig.1 SOT343N.
power amplifiers, such as pocket 1 collector
telephones and paging systems. 2 emitter
3 base MARKING
DESCRIPTION 4 emitter
TYPE NUMBER CODE
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N BFG25AW N6
plastic package. BFG25AW/X V1
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 8 V
VCEO collector-emitter voltage open base 5 V
IC collector current (DC) 6.5 mA
Ptot total power dissipation Ts 85 C 500 mW
hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200
Cre feedback capacitance IC = 0; VCE = 1 V; f = 1 MHz 0.2 0.3 pF
fT transition frequency IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C 3.5 5 GHz
GUM maximum unilateral IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C 16 dB
power gain
F noise figure s opt; IC = 1 mA; VCE = 1 V; f = 1 GHz 2 dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 8 V
VCEO collector-emitter voltage open base 5 V
VEBO emitter-base voltage open collector 2 V
IC collector current (DC) 6.5 mA
Ptot total power dissipation Ts 85 C; see Fig.2; note 1 500 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Sep 23 2
NXP Semiconductors Product specification
NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts 85 C; note 1 180 K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage IC = 100 A; IE = 0 8 V
V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 5 V
V(BR)EBO emitter-base breakdown voltage IE = 100 A; IC = 0 2 V
ICBO collector leakage current open emitter; VCB = 5 V; IE = 0 50 nA
hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200
Cre feedback capacitance IC = 0; VCE = 1 V; f = 1 MHz 0.2 0.3 pF
fT transition frequency IC = 1 mA; VCE = 1 V; f = 1 GHz; 3.5 5 GHz
Tamb = 25 C
GUM maximum unilateral power gain; IC = 0.5 mA; VCE = 1 V; 16 dB
note 1 f = 1 GHz; Tamb = 25 C
IC = 0.5 mA; VCE = 1 V; 8 dB
f = 2 GHz; Tamb = 25 C
F noise figure s opt; IC = 0.5 mA; VCE = 1 V; 1.9 dB
f = 1 GHz
s opt; IC = 1 mA; VCE = 1 V; 2 dB
f = 1 GHz
Note
S 21 2
1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log ---------------------------------------------------------- dB.
1