stf13nm60n-h.pdf part of ST stf13nm60n-h stf13nm60n-h.pdf, . Electronic Components Datasheets Active components Transistors ST stf13nm60n-h.pdf text manual preview

Text preview for : stf13nm60n-h.pdf part of ST stf13nm60n-h . Electronic Components Datasheets Active components Transistors ST stf13nm60n-h.pdf

Back to : stf13nm60n-h.pdf | Home

STF13NM60N-H
N-channel 600 V, 0.28 11 A MDmeshTM II Power MOSFET
,
in TO-220FP

Features
VDSS RDS(on)
Type ID
(@Tjmax) max
STF13NM60N-H 650 V < 0.36 11 A

100% avalanche tested
Low input capacitance and gate charge 3
2
Low gate input resistance 1

Application TO-220FP

Switching applications

Description
Figure 1. Internal schematic diagram
This series of devices implements second
generation MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.

Table 1. Device summary
Order codes Marking Packages Packaging

STF13NM60N-H(1) 13NM60N TO-220FP Tube
1. The device meets ECOPACK