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CEM3252L
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
5
30V, 8A, RDS(ON) = 29m @VGS = 10V.

RDS(ON) = 36m @VGS = 4.5V.

RDS(ON) = 55m @VGS = 2.5V.

Super high dense cell design for extremely low RDS(ON).
D D D D
High power and current handing capability. 8 7 6 5

Lead free product is acquired.

Surface mount Package.

SO-8
1 2 3 4
1 S S S G

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS