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SEMICONDUCTOR KHB7D5N60P1/F1/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB7D0N60P1
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=7.5A
Drain-Source ON Resistance :
RDS(ON)=1.2 @VGS=10V
Qg(typ.)= 32.5nC
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC SYMBOL KHB7D5N60F1 UNIT
KHB7D5N60P1
KHB7D5N60F2
KHB7D0N60F1
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
@TC=25 7.5 7.5*
ID
Drain Current @TC=100 4.6 4.6* A
Pulsed (Note1) IDP 30 30*
Single Pulsed Avalanche Energy EAS 230 mJ
(Note 2)
Repetitive Avalanche Energy EAR 14.7 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 147 48 W
PD
Dissipation Derate above 25 1.18 0.38 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics KHB7D0N60F2
Thermal Resistance, Junction-to-Case RthJC 0.85 2.6 /W
Thermal Resistance, Case-to-Sink RthCS 0.5 - /W
Thermal Resistance,
RthJA 62.5 62.5 /W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2007. 5. 10 Revision No : 0 1/7
KHB7D5N60P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.7 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3.75A - 1.0 1.2
Dynamic
Total Gate Charge Qg - 32.5 43
VDS=480V, ID=7.5A
Gate-Source Charge Qgs - 5.5 7.2 nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 13.2 14.2
Turn-on Delay time td(on) - - 45
VDD=300V
Turn-on Rise time tr - - 130
RL=40 ns
Turn-off Delay time td(off) - - 220
RG=25 (Note4,5)
Turn-off Fall time tf - - 140
Input Capacitance Ciss - 1363 1550
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 121.8 140 pF
Reverse Transfer Capacitance Crss - 17 21
Source-Drain Diode Ratings
Continuous Source Current IS - - 7.5
VGS Pulsed Source Current ISP - - 30
Diode Forward Voltage VSD IS=7.5A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=7.5A, VGS=0V, - 359 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 3.5 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =7.3mH, IS=7.5A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 7.5A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
2007. 5. 10 Revision No : 0 2/7
KHB7D5N60P1/F1/F2
2007. 5. 10 Revision No : 0 3/7
KHB7D5N60P1/F1/F2
2007. 5. 10 Revision No : 0 4/7
KHB7D5N60P1/F1/F2
2007. 5. 10 Revision No : 0 5/7
KHB7D5N60P1/F1/F2
2007. 5. 10 Revision No : 0 6/7
KHB7D5N60P1/F1/F2
2007. 5. 10 Revision No : 0 7/7