php69n03t_2.pdf part of Philips php69n03t 2 php69n03t_2.pdf, . Electronic Components Datasheets Active components Transistors Philips php69n03t

Text preview for : php69n03t_2.pdf part of Philips php69n03t 2 . Electronic Components Datasheets Active components Transistors Philips php69n03t_2.pdf

Back to : php69n03t_2.pdf | Home

Philips Semiconductors Product specification

TrenchMOSTM transistor PHP69N03T
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 30 V
'trench' technology. The device ID Drain current (DC) 69 A
features very low on-state resistance Ptot Total power dissipation 125 W
and has integral zener diodes giving Tj Junction temperature 175