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BC636/BC638/BC640
Transistor(PNP)
1. EMITTER TO-92
2. COLLECTOR
3. BASE
Features
High current transistors
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage BC636 -45
BC638 -60 V
BC640 -100
VCEO Collector-Emitter Voltage BC636 -45
BC638 -60 V
BC640 -80
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1 A
PC Collector Power Dissipation 0.83 W
RJA Thermal Resistance, junction to Ambient 150 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
IC=-100A,IE=0 BC636 -45
Collector-base breakdown voltage V(BR)CBO BC638 -60 V
BC640 -100
IC =-1mA,IB=0 BC636 -45
Collector-emitter breakdown voltage V(BR)CEO BC638 -60 V
BC640 -80
Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V,IC=0 - 0.1 A
hFE(1) VCE= -2V,IC=- 5mA 40
DC current gain hFE(2) VCE= -2V,IC=- 150mA 63 250
hFE(3) VCE= -2V,IC=- 500mA 25
Collector-emitter saturation voltage VCE(sat) IC=- 500mA,IB= -50mA -0.5 V
Base-emitter voltage VBE VCE= -2V,IC= -500mA -1 V
Transition frequency fT VCE= -5V,IC=- 50mA,f=100MHz 100 MHz
CLASSIFICATION OF hFE(2)
Rank BC636-10 BC636-16, BC638-16, BC640-16
Range 63-160 100-250
BC636/BC638/BC640
Transistor(PNP)
Typical Characteristics