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STB90NF3LL
N-CHANNEL 30V - 0.0048 - 80A D2PAK
LOW GATE CHARGE STripFETTM II POWER MOSFET
PRELIMINARY DATA

TYPE VDSS RDS(on) ID

STB90NF3LL 30 V < 0.0055 80 A(#)
s TYPICAL RDS(on) = 0.0048 @ 10 V
s OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
3
s SURFACE-MOUNTING D2PAK (TO-263) 1
POWER PACKAGE IN TUBE (NO SUFFIX) OR
D2PAK
IN TAPE & REEL (SUFFIX "T4") TO-263
(Suffix "T4")
DESCRIPTION
This application specific Power MOSFET is the third
genaration of STMicroelectronis unique "Single Feature
SizeTM" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck INTERNAL SCHEMATIC DIAGRAM
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.

APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 k) 30 V
VGS Gate- source Voltage