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CEP630N/CEB630N
CEF630N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type VDSS RDS(ON) ID @VGS
CEP630N 200V 0.36 9A 10V
CEB630N 200V 0.36 9A 10V
CEF630N 200V 0.36 9A d 10V
Super high dense cell design for extremely low RDS(ON). D
High power and current handing capability.
Lead free product is acquired.
D G
G G
G D D
S S S
S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS