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SSD20P06-135D
P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente 16A, -60V, RDS(ON) 135m

RoHS Compliant Product
A suffix of "-C" specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low RDS(on) and to ensure minimal power loss and heat TO-252(D-Pack)
dissipation. Typical applications are DC-DC converters and power management
in portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.

FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed. A
B C
D
High performance trench technology..

GE
PRODUCT SUMMARY
PRODUCT SUMMARY K HF N
VDS(V) RDS(on) m( ID(A) O
P
M J
135@VGS= -10V 16 Drain
-60
190@VGS= -4.5V 14
Millimeter Millimeter
REF. REF.
Gate Min. Max. Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
Source F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20

ABSOLUTE MAXIMUM RATINGS (TA = 25