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STS3DPF20V
DUAL P-CHANNEL 20V - 0.090 - 3A SO-8
STripFETTM POWER MOSFET
TYPE VDSS RDS(on) ID
STS3DPF20L 20 V <0.11 3A
s TYPICAL RDS(on) = 0.090 @ 4.5 V
s TYPICAL RDS(on) = 0.1 @ 2.7 V
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
DESCRIPTION SO-8
t( s)
uc
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
d
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark- INTERNAL SCHEMATIC DIAGRAMP ro
able manufacturing reproducibility.
le te
so
APPLICATIONS
s BATTERY MANAGEMENT IN NOMADIC
Ob
EQUIPMENT
s MOBILE PHONE APPLICATIONS
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ct (s)
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ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Drain-source Voltage (VGS = 0)
Value
20
Unit
V
VDGR Drain-gate Voltage (RGS = 20 k) 20 V
VGS Gate- source Voltage