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SEMICONDUCTOR KTA1535T
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
E
FEATURES K B
DIM MILLIMETERS
Adoption of MBIT Processes. A _
2.9 + 0.2
High Current Capacitance. B 1.6+0.2/-0.1
C _
0.70 + 0.05
2
Low Collector-to-Emitter Saturation Voltage.
G
3 _
D 0.4 + 0.1
D
A
E 2.8+0.2/-0.3
F
High Speed Switching. F _
1.9 + 0.2
1
G
Ultrasmall-Sized Package permitting applied sets to be G 0.95
H _
0.16 + 0.05
made small and slim. I 0.00-0.10
J 0.25+0.25/-0.15
High Allowable Power Dissipation. K 0.60
C
L 0.55
Complementary to KTC3535T
L
H
I
J J
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT 1. EMITTER
2. BASE
Collector-Base Voltage VCBO -20 V 3. COLLECTOR
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
DC IC -3 TSM
Collector Current A
Pulse ICP -5
Base Current IB 600 mA
Collector Power Dissipation PC * 0.9 W Marking
Junction Temperature Tj 150 Lot No.
Storage Temperature Range Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )
Type Name
SD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-12V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -20 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -20 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=-1.5A, IB=-30mA - -130 -165 mV
Base-Emitter Saturation Voltage VBE(sat) IC=-1.5A, IB=-30mA - -0.85 -1.2 V
DC Current Gain hFE VCE=-2V, IC=-500mA 200 - 560
Transition Frequency fT VCE=-2V, IC=-500mA - 160 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz - 45 - pF
PW=20