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SEMICONDUCTOR KTC5197
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A Q B
K
F
FEATURES
I
Recommended for 55W Audio Frequency
E
Amplifier Output Stage.
C
DIM MILLIMETERS
Complementary to KTA1940. A 15.9 MAX
J
H
B 4.8 MAX
C _
20.0 + 0.3
G
D _
2.0 + 0.3
D d 1.0+0.3/-0.25
E 2.0
L
F 1.0
MAXIMUM RATING (Ta=25 ) d
G 3.3 MAX
H 9.0
CHARACTERISTIC SYMBOL RATING UNIT I 4.5
P P T M J 2.0
Collector-Base Voltage VCBO 120 V K 1.8 MAX
L _
20.5 + 0.5
Collector-Emitter Voltage VCEO 120 V M 2.8
P _
5.45 + 0.2
Emitter-Base Voltage VEBO 5 V 1 2 3 Q 3.2 + 0.2
_
T 0.6+0.3/-0.1
1. BASE
Collector Current IC 10 A
2. COLLECTOR
Base Current IB 0.8 A 3. EMITTER
Collector Power Dissipation (Tc=25 ) PC 80 W
Junction Temperature Tj 150 TO-3P(N)
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=120V, IE=0 - - 5.0 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 5.0 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 120 - - V
hFE(1) (Note) VCE=5V, IC=1A 55 - 160
DC Current Gain
hFE(2) VCE=5V, IC=4A 35 75 -
Collector-Emitter Saturation Voltage VCE(sat) IC=6A, IB=0.6A - 0.35 2.0 V
Base-Emitter Voltage VBE VCE=5V, IC=4A - 0.95 1.5 V
Transition Frequency fT VCE=5V, IC=1A - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 120 - pF
Note : hFE(1) Classification R:55~110, O:80~160.
1998. 10. 21 Revision No : 0 1/2
KTC5197
1998. 10. 21 Revision No : 0 2/2