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SEMICONDUCTOR KTC3730F
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
E
Low Noise Figure, High Gain.
B
Small rbb Cc (Typ. 4pS).
2 DIM MILLIMETERS
A
G
D
A _
0.6 + 0.05
3 _
K
B 0.8 + 0.05
MAXIMUM RATING (Ta=25 ) 1 C 0.38+0.02/-0.04
D _
0.2 + 0.05
E _
1.0 + 0.05
CHARACTERISTIC SYMBOL RATING UNIT _
G 0.35+ 0.05
J _
0.1 + 0.05
Collector-Base Voltage VCBO 20 V _
K 0.15 + 0.05
C
Collector-Emitter Voltage VCEO 11 V
J
Emitter-Base Voltage VEBO 3 V
Collector Current IC 50 mA 1. EMITTER
2. BASE
Collector Power Dissipation PC 50 mW 3. COLLECTOR
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TFSM
Marking
Type Name
h FE Rank
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=10V, IE=0 - - 500 nA
Emitter Cut-off Current IEBO VEB=2V, IC=0 - - 0.5 A
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=5mA - - 0.5 V
DC Current Gain hFE (Note) VCE=10V, IC=5mA 56 - 180
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 0.8 1.5 pF
Collector-Base Time Constant rbb Cc VCE=10V, IE=10mA, f=31.8MHz - 4 12 pS
Transition Frequency fT VCE=10V, IC=10mA, f=500MHz 1.4 3.2 - GHz
VCE=6V, IC=2mA,
Noise Figure NF - 3.5 - dB
f=500MHz, Rg=50
Note) hFE Classification : F:56~120, G:82~180
2005. 4. 7 Revision No : 0 1/3
KTC3730F
2005. 4. 7 Revision No : 0 2/3
KTC3730F
2005. 4. 7 Revision No : 0 3/3