std1hnc60.pdf part of ST std1hnc60 std1hnc60.pdf, . Electronic Components Datasheets Active components Transistors ST std1hnc60.pdf text manual preview

Text preview for : std1hnc60.pdf part of ST std1hnc60 . Electronic Components Datasheets Active components Transistors ST std1hnc60.pdf

Back to : std1hnc60.pdf | Home

STD1HNC60
N-CHANNEL 600V - 4 - 2A - IPAK/DPAK
PowerMeshTMII MOSFET

TYPE VDSS RDS(on) ID

STD1HNC60 600 V <5 2A
s TYPICAL RDS(on) = 4
s EXTREMELY HIGH dv/dt CAPABILITY
3 3
s 100% AVALANCHE TESTED 2
s NEW HIGH VOLTAGE BENCHMARK 1 1
s GATE CHARGE MINIMIZED
IPAK DPAK
DESCRIPTION
TO-251 TO-252
The PowerMESHTMII is the evolution of the first
generation of MESH OVERLAYTM. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage