cep16n10l_ceb16n10l.pdf part of CET cep16n10l ceb16n10l cep16n10l_ceb16n10l.pdf, . Electronic Components Datasheets Active components Transistors CET cep16n10l

Text preview for : cep16n10l_ceb16n10l.pdf part of CET cep16n10l ceb16n10l . Electronic Components Datasheets Active components Transistors CET cep16n10l_ceb16n10l.pdf

Back to : cep16n10l_ceb16n10l.pdf | Home

CEP16N10L/CEB16N10L
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

100V, 15.2A, RDS(ON) = 115m @VGS = 10V.
RDS(ON) = 125m @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.
D
Lead free product is acquired.

TO-220 & TO-263 package.

D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS