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IXKC 20N60C
CoolMOSTM 1) Power MOSFET VDSS = 600 V
ID25 = 15 A
RDS(on) max = 190 m
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
D ISOPLUS220TM
Ultra low gate charge
G G
D
S isolated tab
S
E72873
MOSFET Features
Symbol Conditions Maximum Ratings