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BLA0912-250R
Avionics LDMOS power transistor
Rev. 3 -- 1 December 2010 Product data sheet




1. Product profile

1.1 General description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.

Table 1. Test information
Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz
frequency band. Th = 25