s9013_to-92.pdf part of LGE s9013 to-92 s9013_to-92.pdf, . Electronic Components Datasheets Active components Transistors LGE s9013

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S9013
Transistor(NPN)

TO-92
1. EMITTER

2. BASE

3. COLLECTOR

Features
Complementary to S9012
Excellent hFE linearity

MAXIMUM RATINGS TA=25 unless otherwise noted

Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
PC Collector Dissipation 625 mW Dimensions in inches and (millimeters)
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= 100A , IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE= 100A , IC=0 5 V

Collector cut-off current ICBO VCB= 40V , IE=0 0.1 A

Collector cut-off current ICEO VCE=20V , IE=0 0.1 A

Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A

hFE(1) VCE=1V, IC=50mA 64 400
DC current gain
hFE(2) VCE=1V, IC= 500mA 40

Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.6 V

Base-emitter voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V

Transition frequency fT VCE=6V,IC=20mA,f=30MHz 150 MHz

CLASSIFICATION OF hFE(1)

Rank D E F G H I J

Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400
S9013
Transistor(NPN)

Typical Characteristics