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SEMICONDUCTOR KMA2D8P20X
TECHNICAL DATA P-CH Trench MOSFET

General Description

It's mainly suitable for battery pack or power management in cell phone,
and PDA.

D H
FEATURES
J
VDSS=-20V, ID=-2.8A. E

Drain-Source ON Resistance.
: RDS(ON)=90m (Max.) @ VGS=-4.5V A
DIM MILLIMETERS
A _
3.00 + 0.15
: RDS(ON)=150m (Max.) @ VGS=-2.5V F _
B 1.65 + 0.1
C _
2.85 + 0.2
Super High Dense Cell Design for Extremely Low RDS(ON)
D 1.0+0.15/-0.1
6 4
E 0~0.15
B C F 0.95 TYP
G _
0.45 + 0.1
1 3 H _
0.15 + 0.05
J MIN 0.21

G
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS -20 V
TSOP-6
Gate-Source Voltage VGSS