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3DK2222A
SOT-23 Transistor(NPN)

1. BASE SOT-23
2.EMITTER
3.COLLECTOR

Features
Epitaxial planar die construction
Complementary PNP Type available(MMBT2907A)

MARKING: 1P1

MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 600 mA
PC Collector Power Dissipation 225 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55to+150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= 10A, IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=70 V , IE=0 0.01 A
Collector cut-off current ICEX VCE=60V, VBE(off)=3V 0.01 A
Emitter cut-off current IEBO VEB= 3V, IC=0 0.01 A
HFE(1) VCE=10V, IC= 150mA 100 300
DC current gain HFE(2) VCE=10V, IC= 0.1mA 40
HFE(3) VCE=10V, IC= 500mA 42
0.6
IC=500 mA, IB= 50mA
Collector-emitter saturation voltage VCE(sat) 0.3 V
IC=150 mA, IB=15mA

Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V
VCE=20V, IC= 20mA
Transition frequency fT f=100MHz
300 MHz

Delay time td VCC=30V, VBE(off)=-0.5V 10 nS
Rise time tr IC=150mA , IB1= 15mA 25 nS
Storage time tS VCC=30V, IC=150mA 225 nS
Fall time tf IB1=-IB2=15mA 60 nS
3DK2222A
SOT-23 Transistor(NPN)

Typical characteristics
3DK2222A
SOT-23 Transistor(NPN)