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FDN335N
20V N-Channel Enhancement Mode MOSFET

VDS= 20V
RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70m
RDS(ON), Vgs@ 2.5V, Ids@ 1.5A= 100m

Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance

Package Dimensions

D

G S

SOT-23(PACKAGE)
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 2.70 3.10 G 1.90 REF.
B 2.40 2.80 H 1.00 1.30
C 1.40 1.60 K 0.10 0.20
D 0.35 0.50 J 0.40 -
E 0 0.10 L 0.85 1.15
F 0.45 0.55 M 0