Text preview for : 2sd2118.pdf part of LGE 2sd2118 . Electronic Components Datasheets Active components Transistors LGE 2sd2118.pdf
Back to : 2sd2118.pdf | Home
2SD2118(NPN)
TO-251/TO-252-2L Transistor
TO-251
1.BASE
2.COLLECTOR
3.EMITTER
1 2 3
Features
Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A)
Excellent DC current gain characteristics.
MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150 Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50