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2N7002KA
N-channel TrenchMOS FET
Rev. 03 -- 25 February 2008 Product data sheet

1. Product profile

1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.

1.2 Features
I Logic level compatible I Very fast switching
I Subminiature surface-mounted package I Gate-source ElectroStatic Discharge
(ESD) protection diodes

1.3 Applications
I Relay driver I High-speed line driver

1.4 Quick reference data
I VDS 60 V I ID 320 mA
I RDSon 4.4 I Ptot 0.83 W

2. Pinning information
Table 1. Pinning
Pin Description Simplified outline Symbol
1 gate (G)
3 D
2 source (S)
3 drain (D)
1 2 G

SOT23 (TO-236AB)

S
003aac036
NXP Semiconductors 2N7002KA
N-channel TrenchMOS FET

3. Ordering information
Table 2. Ordering information
Type number Package
Name Description Version
2N7002KA TO-236AB plastic surface-mounted package; 3 leads SOT23

4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25