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CED30P10/CEU30P10
P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-100V, -30A, RDS(ON) = 76m @VGS = -10V.

RDS(ON) = 92m @VGS = -4.5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability. D
Lead free product is acquired.
TO-251 & TO-252 package.

D G

G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK) S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -100 V
Gate-Source Voltage VGS