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SEMICONDUCTOR KMB012N30Q
TECHNICAL DATA N-Ch Trench MOSFET


General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
portable equipment and battery powered systems.
H
T
D P G L

FEATURES
VDSS=30V, ID=12A.
Low Drain-Source ON Resistance. A

: RDS(ON)=7m (Max.) @ VGS=10V DIM MILLIMETERS
A 5.05+0.25/-0.20
: RDS(ON)=11m (Max.) @ VGS=4.5V B1 _
3.90 + 0.3
8 5 B2 _
6.00 + 0.4
Super High Dense Cell Design.
D _
0.42 + 0.1
High Power and Current Handling Capability. G _
0.15 + 0.1
B1 B2
H _
1.4 + 0.2
1 4 L _
0.5 + 0.2
P 1.27 Typ.
T _
0.20 + 0.05

MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 30 V
FLP-8 (1)
Gate-Source Voltage VGSS 20 V
DC ID * 12
Drain Current A
Pulsed IDP * 44
Source-Drain Diode Current IS 1.7 A
Drain Power Dissipation PD * 2.5 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA* 50 /W
Note :* Surface Mounted on 1 1 FR4 Board, t 10sec.




PIN CONNECTION (TOP VIEW) D D D D




S 1 8 D

S 2 7 D

S 3 6 D G

G 4 5 D


S S S




2007. 11. 27 Revision No : 2 1/5
KMB012N30Q

ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V, 30 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=24V - - 1 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 1.6 3.0 V
VGS=10V, ID=12A - 6 7
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=10A - 8.5 11
ON State Drain Current ID(ON)* VGS=10V, VDS=10V 20 - - A
Forward Transconductance gfs* VDS=15V, ID=12A - 22 - S
Source-Drain Diode Forward Voltage VSD* IS=1.7A, VGS=0V - 0.75 1.2 V
Dynamic
VDS=15V, ID=12A, VGS=10V - 65 -
Total Gate Charge Qg*
VDS=15V, ID=12A, VGS=4.5V - 30.5 -
nC
Gate-Source Charge Qgs* - 11 -
VDS=15V, ID=12A, VGS=10V
Gate-Drain Charge Qgd* - 13 -
Turn-on Delay time td(on)* - 27 -
Turn-on Rise time tr* VDD=15V, ID=1A, - 13 -
ns
Turn-off Delay time td(off)* VGS=10V, RG=6 - 127.5 -
Turn-off Fall time tf* - 55.5 -
Input Capacitance Ciss - 3150 -
Output Capacitance Coss VDS=15V, VGS=0V, f=1.0MHz - 680 - pF
Reverse transfer Capacitance Crss - 510 -

Note : *Pulse test : Pulse width 300 , Duty Cycle 2%.




2007. 11. 27 Revision No : 2 2/5
KMB012N30Q



Fig1. ID - VDS Fig2. ID - VGS

20 25
VGS=3.5V
16 VGS=4V
Drain Current ID (A)




Drain Current ID (A)
20
VGS=4.5V

12 15
VGS=10V
125 C
VGS=3V
8 10

25 C
4 5
-55 C
VGS=2.5V
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.6 1.2 1.8 2.4 3.0 3.6

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)




Fig4. IS - VSD
Fig3. Vth - Tj
20
VGS = 0V
Normalized Threshold Voltage Vth




1.3
Reverse Drain Current IS (A)




VDS = VGS
IDS = 250