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STB5NA80
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
ST B5NA80 800 V < 2.4 4.7 A

s TYPICAL RDS(on) = 1.8
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s VERY HIGH CURRENT CAPABILITY
3 3
s APPLICATION ORIENTED 12 1
CHARACTERIZATION
s THROUGH-HOLE I2PAK (TO-262) POWER
I2PAK D2PAK
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING D2PACK (TO-263) TO-262 TO-263
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING INTERNAL SCHEMATIC DIAGRAM
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V DS Drain-source Voltage (V GS = 0) 800 V
VDGR Drain- gate Voltage (R GS = 20 k) 800 V
V GS Gate-source Voltage