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SEMICONDUCTOR KHB9D0N90P1/F1
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB9D0N90P1
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 900V, ID= 9A
Drain-Source ON Resistance :
RDS(ON)=1.4 @VGS =10V
Qg(typ.) =75nC
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC SYMBOL UNIT
KHB9D0N90P1 KHB9D0N90P1
KHB9D0N90F1
Drain-Source Voltage VDSS 900 V
Gate-Source Voltage VGSS 30 V
@TC=25 9.0 9.0*
ID
Drain Current @TC=100 36 36* A
Pulsed (Note1) IDP 36 36*
Single Pulsed Avalanche Energy
EAS 900 mJ
(Note 2)
Repetitive Avalanche Energy
EAR 20.5 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 205 68 W
PD
Dissipation Derate above25 1.65 0.54 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 0.61 1.85 /W
Thermal Resistance, Case-to-Sink RthCS 0.5 - /W
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W
Ambient
* : Drain current limited by maximum junction temperature.
2006. 5. 19 Revision No : 0 1/7
KHB9D0N90P1/F1
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 900 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.99 - V/
Drain Cut-off Current IDSS VDS=900V, VGS=0V - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4.5A - 1.12 1.4
Dynamic
Total Gate Charge Qg - 75 90
VDS=720V, ID=9A
Gate-Source Charge Qgs - 12 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 30.5 -
Turn-on Delay time td(on) - 48 106
VDD=4500V
Turn-on Rise time tr - 70 150
RL=25 ns
Turn-off Delay time td(off) - 289 588
RG=9.0A (Note4,5)
Turn-off Fall time tf - 117 244
Input Capacitance Ciss - 2663 3462
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz - 183 238 pF
Output Capacitance Coss - 20 26
Source-Drain Diode Ratings
Continuous Source Current IS - - 8.0
VGS Pulsed Source Current ISP - - 32.0
Diode Forward Voltage VSD IS=8.0A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=9.0A, VGS=0V, - 550 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 6.5 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 21mH, IS=9.0A, VDD=50V, RG = 25 , Starting Tj = 25 .
Note 3) IS 9A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
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