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PZT358
NPN Transistor
Elektronische Bauelemente Silicon Planar High Current Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free SOT-223
Description
The PZT358 is designed for general C
3
B
purpose switching and amplifier

H
applications. E

D
4

A
Features 1

I 5
* 6Amps Continous Current, Up To
J 2
10Amps Peak Current
* Excellent Gain Characteristic, REF. REF.
Min. Max. Min. Max.
Specified Up To 10Amps A 6.70 7.30 B C
13 T YP.
* Very Low Saturation Voltages C 2.90 3.10 J 2.30 REF.
3 5 8 D 0.02 0.10 1 6.30 6.70
Date Code
E 0C 10 C 2 6.30 6.70
I 0.60 0.80 3 3.30 3.70
B C E H 0.25 0.35 4 3.30 3.70
o 5 1.40 1.80
MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 200 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 6 V
Collector Current (DC) 6
IC A
Collector Current (Pulse) 10
PD Total Power Dissipation 3 W
TJ,Tstg Junction and Storage Temperature -55~-150 C
O

*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Min Typ. Max Uni Test Conditions
Collector-Base Breakdown Voltage BVCBO 200 - - V I C= 100