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SEMICONDUCTOR KTB817B
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTD1047B.
Recommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -140 V
Emitter-Base Voltage VEBO -6 V
DC IC -12
Collector Current A
Pulse ICP -15
Collector Power Dissipation (Tc=25 ) PC 100 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -0.1 mA
Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 mA
hFE (1) (Note) VCE=-5V, IC=-1A 60 - 200
DC Current Gain
hFE 2 VCE=-5V, IC=-6A 20 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-5A, IB=-0.5A - - -2.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-1A - - -1.5 V
Transition Frequency fT VCE=-5V, IC=-1A - 15 - MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 300 - pF
Turn On Time ton VCC=-20V - 0.25 -
Fall Time tf IC=1A=10 IB1=-10 IB2 - 0.53 - S
Storage Time tstg RL=20 - 1.61 -
Note : hFE(1) Classification O:60 120, Y:100 200
2011. 3. 18 Revision No : 0 1/3
KTB817B
2011. 3. 18 Revision No : 0 2/3
KTB817B
2011. 3. 18 Revision No : 0 3/3