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STD12N05L
STD12N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR

TYPE V DSS R DS( on) ID
STD12N05L 50 V < 0.15 12 A
STD12N06L 60 V < 0.15 12 A

s TYPICAL RDS(on) = 0.115
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED 3
s REPETITIVE AVALANCHE DATA AT 100oC 2 3
s LOW GATE CHARGE 1 1
s LOGIC LEVEL COMPATIBLE INPUT
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED IPAK DPAK
CHARACTERIZATION TO-251 TO-252
s THROUGH-HOLE IPAK (TO-251) POWER (Suffix "-1") (Suffix "T4")
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STD12N05L STD12N06L
VD S Drain-source Voltage (V GS = 0) 50 60 V
V DG R Drain- gate Voltage (R GS = 20 k) 50 60 V
V GS Gate-source Voltage