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PolarHVTM HiPerFET IXFR 64N60P VDSS = 600 V
ID25 = 36 A
Power MOSFET RDS(on) 105 m
(Electrically Isolated Back Surface)
trr 200 ns

N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
ISOPLUS247 (IXFR)
Symbol Test Conditions Maximum Ratings E153432

VDSS TJ = 25