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BUZ11
BUZ11FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS

TYPE V DSS R DS( on) ID
BUZ11 50 V < 0.04 36 A
BUZ11FI 50 V < 0.04 21 A

s TYPICAL RDS(on) = 0.03
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
3 3
s LOW GATE CHARGE 2 2
1 1
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
TO-220 ISOWATT220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION, INTERNAL SCHEMATIC DIAGRAM
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
BUZ11 BUZ11FI
VD S Drain-source Voltage (V GS = 0) 50 V
V DG R Drain- gate Voltage (R GS = 20 k) 50 V
V GS Gate-source Voltage