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Philips Semiconductors Product Specification

PowerMOS transistor BUK482-100A

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suitable for surface VDS Drain-source voltage 100 V
mount applications. ID Drain current (DC) 1.8 A
The device is intended for use in Ptot Total power dissipation 1.8 W
automotive and general purpose Tj Junction temperature 150