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CEM9436A
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
5
30V, 6.2A, RDS(ON) = 38m @VGS = 10V.
RDS(ON) = 52m @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.
Lead free product is acquired. D D D D
8 7 6 5
Surface mount Package.

SO-8
1 2 3 4
1 S S S G

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS