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DISCRETE SEMICONDUCTORS

DATA SHEET

BFG97
NPN 5 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFG97

DESCRIPTION PINNING
NPN planar epitaxial transistor age 4
PIN DESCRIPTION
mounted in a plastic SOT223
1 emitter
envelope.
It features excellent output voltage 2 base
capabilities, and is primarily intended 3 emitter
for use in MATV applications. 4 collector
PNP complement is the BFG31.

1 2 3
Top view MSB002 - 1

Fig.1 SOT223.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter - - 20 V
VCEO collector-emitter voltage open base - - 15 V
IC DC collector current - - 100 mA
Ptot total power dissipation up to Ts = 125