ces2305.pdf part of CET ces2305 ces2305.pdf, . Electronic Components Datasheets Active components Transistors CET ces2305.pdf text manual preview

Text preview for : ces2305.pdf part of CET ces2305 . Electronic Components Datasheets Active components Transistors CET ces2305.pdf

Back to : ces2305.pdf | Home

CES2305
P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES

-30V, -4A, RDS(ON) = 55m @VGS = -10V.
RDS(ON) = 70m @VGS = -4.5V.
RDS(ON) = 120m @VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
D
Rugged and reliable.

Lead-free plating ; RoHS compliant.

SOT-23 package.

G
D
S

G

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS