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AP4957GM
Pb Free Plating Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
Low On-Resistance D2
BVDSS -30V
D2
Simple Drive Requirement D1 RDS(ON) 24m
D1
Dual P MOSFET Package ID -7.7A
G2
S2
SO-8 G1
S1
Description
D1 D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
G1 G2
cost-effectiveness.
S1 S2
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage