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SEMICONDUCTOR KTK919S
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
RF Switching for VCR Tuner
FEATURES E
Low loss at on state(Typ 1dB@1GHz) L B L
DIM MILLIMETERS
With built-in bias diode A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1
G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
P P L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
N
C
J
P 7
K
M
1. SOURCE
Maximum Ratings (Ta=25 ) 2. DRAIN
3. GATE
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source-Voltage VDS 3 V
Drain-Gate-Voltage VDG 7 V SOT-23
Source-Gate-Voltage VSG 7 V
Drain Current ID 10 mA
Power Dissipation PC 150 mW
Marking
Junction Temperature Tj 150
Lot No.
Storage Temperature Range Tstg -55~150
Type Name
M1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Gate-Source Breakdown Voltage V(BR)GSS VDS=0, IGS=-0.1mA 7 - - V
Gate-Source Pinch-off Voltage VGS(OFF) VDS=1V, ID=20 A - -3 -4 V
Drain-Source Leakage Current IDSX VDS=2V, VGS=-5V - - 10 A
Gate Cut-off Current IGSS VDS=0, VGS=-5V - - -100 nA
Drain-Source On-State Resistance RDS(ON) VGS=0, ID=1mA - 12 20
VSG=VDG=0, RS=RL=50 , f 860MHz - - 3 dB
Loss(On-State) S21(ON) 2
VSG=VDG=0, RS=RL=75 , f 860MHz - - 3.5 dB
VSG=VDG=5V, RS=RL=50 , f 860MHz 30 - - dB
Isolation (Off-State) S21(OFF) 2
VSG=VDG=5V, RS=RL=75 , f 860MHz 30 - - dB
VSG=VDG=5V, f=1MHz - 0.9 - pF
Input Capacitance Cig
VSG=VDG=0, f=1MHz - 1.5 - pF
VSG=VDG=5V, f=1MHz - 0.9 - pF
Output Capacitance Cog
VSG=VDG=0, f=1MHz - 1.5 - pF
2007. 4. 24 Revision No : 1 1/2
KTK919S
2 2
S21(ON) - f S21(OFF) - f
0 2 0
S21(OFF)
2 VSG=VDG=5V
S21(ON) (2) (dB) (1) RS=RL=50
(dB) -1 (2) RS=RL=75
(1)
ISOLATION (OFF-STATE)
-20
LOSS (ON-STATE)
-2
-3 (2)
-40
-4 VSG=VDG=0V (1)
(1) RS=RL=50
(2) RS=RL=75
-5 -60
10 102 103 10 102 103
FREQUENCY f (MHz) FREQUENCY f (MHz)
2007. 4. 24 Revision No : 1 2/2