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SEMICONDUCTOR BFS20/BF599
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
E
L B L
DIM MILLIMETERS
A _
2.93 + 0.20
MAXIMUM RATING (Ta=25 ) B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 0.45+0.15/-0.05
D
CHARACTERISTIC SYMBOL RATING UNIT
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
Collector-Base Voltage VCBO 40 V H 0.95
J 0.13+0.10/-0.05
Collector-Emitter Voltage VCEO 25 V K 0.00 ~ 0.10
L 0.55
P P
BFS20 4 M 0.20 MIN
Emitter-Base Voltage VEBO V N 1.00+0.20/-0.10
BF599 5
N
C
P 7
J
Collector Current IC 25 mA M
K
Emitter Current IE -25 mA
1. EMITTER
Collector Power Dissipation PC 200 mW 2. BASE
Tj 3. COLLECTOR
Junction Temperature 150
Storage Temperature Range Tstg -65 150
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=2mA, IB=0 25 - - V
Emitter-Base BFS20 4
V(BR)EBO IE=10 A, IC=0 - - V
Breakdown Voltage BF599 5
VCB=20V, IE=0 - - 100 nA
BFS20
Collector Cut-off Current ICBO VCB=20V, IE=0, Ta=150 - - 10 A
BF599 VCB=40V, IE=0 - - 100 nA
DC Current Gain hFE VCE=10V, IC=7mA 40 - - -
BFS20 - 750 900
Base-Emitter Voltage VBE(ON) VCE=10V, IC=7mA mV
BF599 - 750 -
BFS20 275 550 -
Transition Frequency fT VCE=10V, IC=7mA, f=100MHz MHz
BF599 - 550 -
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 0.35 - pF
MARK SPEC Marking
Type Name Lot No. Lot No.
TYPE MARK
BFS20 G1
G1 Type Name
G2
BF599 G2
1999. 11. 30 Revision No : 2 1/1