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MSD42SWT1G
NPN Silicon General
Purpose High Voltage
Transistor
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323 http://onsemi.com
package which is designed for low power surface mount applications.
COLLECTOR
Features
3
These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25C)
Rating Symbol Value Unit 1 2
Collector-Base Voltage V(BR)CBO 300 Vdc BASE EMITTER
Collector-Emitter Voltage V(BR)CEO 300 Vdc
Emitter-Base Voltage V(BR)EBO 6.0 Vdc 3
Collector Current - Continuous
- IC 150 mAdc 1
2
THERMAL CHARACTERISTICS
Rating Symbol Max Unit SC- 70 (SOT- 323)
- -
Power Dissipation (Note 1) PD 150 mW CASE 419
STYLE 3
Junction Temperature TJ 150 C
Storage Temperature Range Tstg - 55 to +150
- C
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
D4 M G
ELECTRICAL CHARACTERISTICS G
Characteristic Symbol Min Max Unit 1
Collector-Emitter Breakdown Voltage V(BR)CEO 300 -
- Vdc
(IC = 1.0 mAdc, IB = 0) D4 = Device Code
M = Date Code*
Collector-Base Breakdown Voltage V(BR)CBO 300 -
- Vdc G = Pb--Free Package
(IC = 100 mAdc, IE = 0)
(Note: Microdot may be in either location)
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 -
- Vdc *Date Code orientation may vary depending
(IE = 100 mAdc, IE = 0) upon manufacturing location.
Collector-Base Cutoff Current ICBO -
- 0.1 mA
(VCB = 300 Vdc, IE = 0) ORDERING INFORMATION
Emitter-
-Base Cutoff Current IEBO -
- 0.1 mA Device Package Shipping
(VEB = 6.0 Vdc, IB = 0)
MSD42SWT1G SC-
-70/SOT- -323 3000/Tape & Reel
DC Current Gain (Note 2) -
- (Pb--Free)
(VCE = 10 Vdc, IC = 1.0 mAdc) hFE1 25 200
(VCE = 10 Vdc, IC = 30 mAdc) hFE2 40 -
- For information on tape and reel specifications,
including part orientation and tape sizes, please
Collector-Emitter Saturation Voltage VCE(sat) -
- 0.5 Vdc refer to our Tape and Reel Packaging Specifications
(Note 2) (IC = 200 mAdc, Brochure, BRD8011/D.
IB = 2.0 mAdc)
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 2 MSD42SWT1/D
MSD42SWT1G
PACKAGE DIMENSIONS
SC-
-70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
STYLE 3:
c
A A2 PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002) L
A1
SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1 inches
mm
*For additional information on our Pb-
-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
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