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Philips Semiconductors Product specification

PowerMOS transistor BUK475-200A/B
Isolated version of BUK455-200A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. The BUK475 -200A -200B
device is intended for use in Switched VDS Drain-source voltage 200 200 V
Mode Power Supplies (SMPS), ID Drain current (DC) 7.6 7 A
motor control, welding, DC/DC and Ptot Total power dissipation 30 30 W
AC/DC converters, and in general Tj Junction temperature 150 150